 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CMLM2205 M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Central TM Semiconductor Corp. SOT-563 CASE DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module TM consisting of a single NPN Transistor and Schottky Diode packaged in a space saving PICOminiTM SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. * Combination: Small Signal Switching NPN Transistor and Low VF Schottky Diode. * Complementary Device: CMLM0705 MARKING CODE: C22 SYMBOL PD TJ, Tstg JA SYMBOL VCBO VCEO VEBO IC SYMBOL VRRM IF IFRM IFSM UNITS mW C C/W UNITS V V V mA UNITS V mA A A MAX 10 10 10 10 UNITS nA A nA nA V V V V V V V MAXIMUM RATINGS (SOT-563 Package): (TA=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current MAXIMUM RATINGS D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms 350 -65 to +150 357 100 45 6.0 600 40 500 3.5 10 TYP ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V O ICBO VCB=60V, TA=125 C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10A 100 BVCEO IC=10mA 45 BVEBO IE=10A 6.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 100 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=1.0V, IC=150mA 75 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 60 145 53 0.09 0.12 0.15 0.50 1.2 2.0 210 205 205 150 300 130 R0 (06-October 2004) Central SYMBOL fT Cob Cib NF td tr ts tf TM CMLM2205 M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) TEST CONDITIONS VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=100mA, RS=1.0k, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA MIN 300 MAX 8.0 25 4.0 10 25 225 60 UNITS MHz pF pF dB ns ns ns ns ELECTRICAL CHARACTERISTICS D1 (TA=25C) IR VR= 10V IR VR= 30V BVR IR= 500A VF IF= 100A VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz D A 6 20 100 40 0.13 0.21 0.27 0.35 0.47 50 A A V V V V V V pF SOT-563 - MECHANICAL OUTLINE E 5 E 4 B G F 1 2 3 C H R0 MARKING CODE: C22 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) COLLECTOR Q1 R0 (06-October 2004) |
Price & Availability of CMLM2205
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |